Rg59 Cable 100m Packing Indoor Use

Model NO.: RG59
Inner Coductor Od: 0.81mm
Dielectric Od: 3.66
Dielecric: Foam PE
1st Shield: Al Foil
2ND Shield: Al/CCA Bradis
Shield Covery: 30%-90%
Jacket: PVC
Jacket Od: 6.0mm
Usage: CCTV/CATV
Trademark: OEM or HF
Specification: CE. ROHS. ETL, ISO
Origin: Lin′an Zhejiang
HS Code: 854420000
Model NO.: RG59
Inner Coductor Od: 0.81mm
Dielectric Od: 3.66
Dielecric: Foam PE
1st Shield: Al Foil
2ND Shield: Al/CCA Bradis
Shield Covery: 30%-90%
Jacket: PVC
Jacket Od: 6.0mm
Usage: CCTV/CATV
Trademark: OEM or HF
Specification: CE. ROHS. ETL, ISO
Origin: Lin′an Zhejiang
HS Code: 854420000
Construction:
Inner Conductor- - - - 0.81± 0.01mm Copper Clad Steel 21%
Dielectric - - - - - - -- 3.66± 0.05mm Foam PE
Shield - - - - - - - - - - - - Bonded Aluminum PET Aluminum
Braid Coverage- - -- - - 0.12mm *16*6 (60%)AL-Mg Alloy
Shield- - - - - - - - - -- - - Aluminum PET Aluminum
Jacket- - - - - - - - - - - - 6.1± 0.05 mm PVC
Jelly/APD - - - - -- - - - - Per Customized Construction:
Inner Conductor- - - - 0.81± 0.01mm Copper Clad Steel 21%
Dielectric - - - - - - -- 3.66± 0.05mm Foam PE
Shield - - - - - - - - - - - - Bonded Aluminum PET Aluminum
Braid Coverage- - -- - - 0.12mm *16*6 (60%)AL-Mg Alloy
Shield- - - - - - - - - -- - - Aluminum PET Aluminum
Jacket- - - - - - - - - - - - 6.1± 0.05 mm PVC
Jelly/APD - - - - -- - - - - Per Customized

SCHOTTKY

The Schottky Diode is another type of semiconductor diode which can be used in a variety of wave shaping, switching and rectification applications the same as any other junction diode. The main adavantage is that the forward voltage drop of a Schottky Diode is substantially less than the 0.7 volts of the conventional silicon pn-junction diode.

Schottky diodes have many useful applications from rectification, signal conditioning and switching, through to TTL and CMOS logic gates due mainly to their low power and fast switching speeds.


the Schottky Diode also known as a Schottky Barrier Diode is a solid-state semiconductor diode in which a metal electrode and an n-type semiconductor form the diodes ms-junction giving it two major advantages over traditional pn-junction diodes, a faster switching speed, and a low forward bias voltage.

The metal–to-semiconductor or ms-junction provides a much lower knee voltage of typically 0.3 to 0.4 volts compared against a value of 0.6 to 0.9 volts seen in a standard silicon base pn-junction diode for the same value of forward current.

Variations in the metal and semiconductor materials used for their construction means that silicon carbide (SiC) Schottky diodes are able to turn [ON" with with a forward voltage drop as little as 0.2 volts with the Schottky diode replacing the less used germanium diode in many applications requiring a low knee voltage.

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Changzhou Changyuan Electronic Co., Ltd. , https://www.changyuanelectronic.com

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